- field oxide doping
- Микроэлектроника: легирование под защитным слоем оксида
Универсальный англо-русский словарь. Академик.ру. 2011.
Универсальный англо-русский словарь. Академик.ру. 2011.
Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… … Wikipedia
Zinc oxide — Other names Zinc white Calamine Identifiers … Wikipedia
Monolayer doping — (MLD) is a well controlled, wafer scale surface doping technique first developed at the University of California, Berkeley, in 2007.[1] This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially … Wikipedia
Bismuth strontium calcium copper oxide — Bismuth strontium calcium copper oxide, or BSCCO (pronounced bisko ), is a family of high temperature superconductors having the generalized chemical formula Bi2Sr2Ca n Cu n +1O2 n +6 d.BSCCO was also the first high temperature superconductor to… … Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
High-temperature superconductivity — Unsolved problems in physics What causes superconductivity at temperatures above 50 kelvin? High temperature superconductors (abbreviated high Tc or HTS) are materials that have a superconducting transition temperature (Tc) above 30 K… … Wikipedia
Memristor — Type Passive Working principle Memristance Invented Leon Chua (1971) First production HP Labs (2008) Electronic symbol … Wikipedia
Threshold voltage — The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The creation of this layer is described next … Wikipedia
Ohmic contact — An ohmic contact is a region on a semiconductor device that has been prepared so that the current voltage (I V) curve of the device is linear and symmetric. If the I V characteristic is non linear and asymmetric, the contact is not ohmic, but is… … Wikipedia
Nobel Prizes — ▪ 2009 Introduction Prize for Peace The 2008 Nobel Prize for Peace was awarded to Martti Ahtisaari, former president (1994–2000) of Finland, for his work over more than 30 years in settling international disputes, many involving ethnic,… … Universalium
Center of Excellence in Nanotechnology at AIT — Center of Excellence at AIT CoEN @ AIT Motto There is no sky to limit us at the bottom Type Center of Excellence Endowment … Wikipedia